The MB85R2001 is 2 Mbit Ferroelectric Random Access Memory (FRAM) chip packaged on a 48-pin plastic TSOP and operating at a temperature range of -20°C to +85°C. It has 10 years of data retention and ...

MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the ...

The ferroelectrical properties of materials have found a variety of uses over the years, including in semiconductor applications. Ferroelectric memory is among the most interesting and possibly ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

Ongoing Collaboration Includes Production of World's First 4-Megabit Nonvolatile FRAM Featuring the Highest Density Available DALLAS, March 12 /PRNewswire/ -- Texas Instruments (TI) (NYSE: TXN) and ...

Offered as an alternative technology for the storage of firmware in embedded systems, the P15 PC MIP mezzanine card includes a non-volatile ferroelectric random access memory (FRAM) and can provide up ...

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and ...

Traditional memory technologies face limitations in terms of speed, scalability, and power consumption, making them unsuitable for future data-intensive applications. Ferroelectric memory has garnered ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...