Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...

Fujitsu has developed a crystal structure that increases both current and voltage in GaN HEMTs, effectively tripling the output power of transistors used for transmitters in the microwave band. By ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

DUBLIN--(BUSINESS WIRE)--The "Infineon 600V CoolGaN Transistor Family" report has been added to ResearchAndMarkets.com's offering. The first GaN-on-Si HEMT transistor from the world leader in power ...

This article is the first in a series of articles written for the power systems design engineer and engineering manager. Throughout the next several months we will look at gallium nitride technology ...

Download this article in PDF format. The end markets serviced by the semiconductor industry are rapidly adopting power semiconductor devices based on wide-bandgap (WBG) semiconductors, including ...

Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...

The QST substrate, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co. Ltd developed, has been adopted for the 300-mm GaN power device development program at imec, Belgium. Sample evaluation is ...

A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers ...

TOKYO, November 13, 2025--(BUSINESS WIRE)--The QST TM substrate *1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, ...