ESPOO, Finland, May 1, 2025 /PRNewswire/ -- Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 ...

Fabio Necco will be taking over from Cambridge GaN Devices ’ (CGD) Co-Founder, Giorgia Longobardi, as CEO in 2026.

òFabio Necco has started the new year as CEO of fabless semiconductor company Cambridge GaN Devices (CGD).

Firms to collaborate on state-of-the-art 200mm eMode lateral GaN-on-Silicon process technology for critical markets, starting with 650V ...

A transition towards gallium nitride on silicon (GaN-on-Si) RF power devices is happening in the market, which is a trade-off between enhanced performance and moderate cost. GaN power amplifiers offer ...

NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...

The "The Global Power Electronics Market 2026-2036" has been added to ResearchAndMarkets.com's offering. The global power electronics market is projected to grow with a CAGR exceeding 8%, adding over ...

HAVERHILL, Mass.--(BUSINESS WIRE)--For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and ...

International Rectifier Corp. has successfully developed a GaN-based (gallium-nitride) power-device technology platform. It’s expected to provide improvements in two key application-specific figures ...

Gallium-nitride power transistors occupy a unique performance niche. Here is why, along with five GaN devices to consider for your next design. 1. A graph from “Comparative Study of Optimally Designed ...

onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...