TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

Santa Clara, CA and Kyoto, Japan, April 25, 2023 (GLOBE NEWSWIRE) -- Kyoto-based ROHM Semiconductor and Semikron Danfoss have been collaborating for more than ten years with regards to the ...

Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar ...

New IXIDM1401 driver module combines supreme compactness with the highest performance and reliability. IXYS’ objective is to serve the market with IGBT driver parts that enable a short design circle ...

Description: (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 1200 VCESat (V): 2.05 Current (A) Tc=80C: 150 ...

CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge insulated‑gate bipolar transistor (IGBT) module, designed for high‑performance ...

Infineon has introduced a 50kW automotive-qualified IGBT half bridge for electric and hybrid vehicles. Called FF300R08W2P2_B11A, and rated to 230Arms, it includes a pair of 750V IGBTs from the company ...

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...