Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
Two new silicon npn planar RF transistors can serve as RF front ends for analog and digital wireless communication systems up to 3 GHz. The TSDF2005W and TSDF2020W feature a 25-GHz transition ...
Microchip Technology Inc. recently expanded its gallium nitride (GaN) radio frequency (RF) power device portfolio with new monolithic microwave ICs (MMICs) and discrete transistors that cover ...
The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.
Ampleon has launched four 700-W GaN-on-SiC RF transistors for S-band radar systems, operating between 2.7 GHz and 3.5 GHz. The CLS3H2731 and CLS3H3135 series leverage a radar-optimized GaN-on-SiC ...
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