Abstract: A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To ...
Abstract: We demonstrated a confined storage nitride (SN) 3D-NAND cell with an innovative process flow including WL airgap formation. Airgaps strongly reduced WL parasitic capacitance which translates ...
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